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The role of Energy Deposition in the Epitaxial Layer in Triggering SEGR in Power MOSFETsIn these SEGR experiments, three identical-oxide MOSFET types were irradiated with six ions of significantly different ranges. Results show the prime importance of the total energy deposited in the epitaxial layer.
Document ID
20060040749
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
hdl:2014/17740
Authors
Selva, L.
Swift, G.
Taylor, W.
Edmonds, L.
Date Acquired
August 23, 2013
Publication Date
July 12, 1999
Subject Category
Space Radiation
Distribution Limits
Public
Copyright
Other
Keywords
energy deposition epitaxial layer SEGR in Power MOSFETs

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