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640x486 Long-wavelength Dualband GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array CameraAn optimized long-wavelength/very long-wavelength two-color Quantum Well Infrared Photodetector (QWIP) device structure has been designed. This device structure was grown on a three-inch semi-insulating GaAs substrate by molecular beam epitaxy (MBE).
Document ID
20060040781
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Gunapala, S.
Bandara, S.
Liu, J.
Rafol, S.
Luong, E.
Mumolo, J.
Tran, N.
Date Acquired
August 23, 2013
Publication Date
September 5, 1999
Subject Category
Electronics And Electrical Engineering
Distribution Limits
Public
Copyright
Other
Keywords
multi-quantum-wells intersubband transitions long-wavelength infrared two-color
Focal Plane Arrays

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