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Excitation Spectroscopy as a Tool of Microelectronics ReliabilityThe main objective of this task was to experimentally determine the feasibility of using a non-contact IR emission spectroscopy technique to measure the hot spot channel temperature of sub-micron GaAs metal semiconductor field effect transistor gate during operation.
Document ID
20060040927
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
hdl:2014/18393
Authors
Kim, Q.
Kayali, S.
Date Acquired
August 23, 2013
Publication Date
October 26, 1999
Distribution Limits
Public
Copyright
Other
Keywords
Excitation Spectroscopy Microspot Temperature Assessment Microelectronics
Reliability Non-destructive

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