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Ballistics-Electron-Microscopy and Spectroscopy of Metal/GaN InterfacesBEEM spectroscopy and imaging have been applied to the Au/GaN interface. In contrast to previous BEEM measurements, spectra yield a Schottky barrier height of 1.04eV that agrees well with the highest values measured by conventional methods.
Document ID
20060041088
Acquisition Source
Jet Propulsion Laboratory
Document Type
Reprint (Version printed in journal)
External Source(s)
hdl:2014/18942
Authors
Bell, L. D.
Smith, R. P.
McDermott, B. T.
Gertner, E. R.
Pittman, R.
Pierson, R. L.
Sullivan, G. J.
Date Acquired
August 23, 2013
Publication Date
December 1, 1997
Publication Information
Publication: Applied Physics Letters
Subject Category
Physics (General)
Distribution Limits
Public
Copyright
Other
Keywords
ballistic-electron-emission microscopy spectroscopy

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