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Advances in Discrete GaAs JFETs and Simple Amplifiers for Deep Cryogenic ReadoutsThe progress of the Jet Propulsion Laboratory in developing gallium arsenide junction field-effect transistors (GaAs JFETs) for application in infrared readout electronics operating below 10 Kelvin is discussed.
Document ID
20060041150
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
hdl:2014/19068
Authors
Cunningham, T. J.
Fitzsimmons, M.
Date Acquired
August 23, 2013
Publication Date
June 24, 1998
Subject Category
Engineering (General)
Distribution Limits
Public
Copyright
Other
Keywords
cryogenic readout gallium arsenide junction field-effect transistors infrared

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