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Metal/GaN Schottky Barriers Characterized by Ballistic-Electron-Emission Microscopy and SpectroscopyBallistic-electron-emission (BEEM) and spectroscopy have been used to characterize the Pd/GaN and Au/GaN interfaces.
Document ID
20060041186
Acquisition Source
Jet Propulsion Laboratory
Document Type
Reprint (Version printed in journal)
External Source(s)
hdl:2014/19147
Authors
Bell, L. D.
Smith, R. P.
McDermott, B. T.
Gertner, E. R.
Pittman, R.
Pierson, R. L.
Sullivan, G. J.
Date Acquired
August 23, 2013
Publication Date
March 1, 1998
Publication Information
Publication: Journal of Vacuum Science and Technology
Subject Category
Electronics And Electrical Engineering
Distribution Limits
Public
Copyright
Other
Keywords
Schottky barriers ballistic-electron-emission microscopy spectroscopy

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