Bandgap Shifting of an Ultra-Thin InGaAs/InP Quantum Well Infrared Photodetector

Sengupta, D. K.; Gunapala, S. D.; Bandara, S. V.; Liu, J. K.; Luong, E.; Hong, W.; Mumolo, J.; Bae, Y.; Stillman, G. E.; Jackson, S. L.; Feng, M.; Bishop, S. G.; Adesida, I.; Chuang, S. L.; Hseih, K. C.; Kim, S.; Ping, A.; Curtis, A. P.; Kuo, H. C.; Change, Y. C.; Liu, H. C.

We demonstrate that SiO(sub 2) cap annealing in the ultra-thin p-type InGaAs/InP quantum wells can be used to produce large blue shifts of the band edge. A substantial bandgap blue shift, as much a 292.5 meV at 900 degrees C have been measured and the value of the bandgap shift can be controlled by the anneal time.

Document ID

20060041206

Acquisition Source

Jet Propulsion Laboratory

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Reprint (Version printed in journal)

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hdl:2014/19204

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Date Acquired

August 23, 2013

Publication Date

March 1, 1998

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Publication: Applied Physics Letters

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Public

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