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Comparison of Intersubband GaAs/AlGaAs Multiple Quantum Well Infrared Photodetectors on GaAs and GaAs-on-Si SubtratesWe have successfully fabricated intersubband GaAs/AlGaAs quantum well infrared photodetectors grown on GaAs-on-Si substrate and evaluated their structural, electrical, and optical characteristics. We have found that the performance is comparable to a similar detector structure grown on a semi-insulating GaAs substrate.
Document ID
20060041361
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
hdl:2014/20178
Authors
Sengupta, D.
Gunapala, S.
George, T.
Bandara, S.
Chang-Chien, C. N.
Leon, R.
Kayali, S.
Kuo, H.
Fang, W.
Liu, H.
Stillman, G.
Date Acquired
August 23, 2013
Publication Date
April 13, 1998
Distribution Limits
Public
Copyright
Other
Keywords
response GaAs-on-Si substrate
Quantum well infrared photodetectors dark current spectral response absolute

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