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Observations on the Presumed LET Dependence of SEGRSingle-event gate rupture (SEGR)in vertical power MOSFETs is induced by charge deposited in the epitaxial region (below the gate oxide) in concert with the weakening of the oxide, both are a result of the ion passage.
Document ID
20060041378
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
hdl:2014/20212
Authors
Selva, L.
Swift, G.
Taylor, W.
Edmonds, L.
Date Acquired
August 23, 2013
Publication Date
April 21, 1998
Subject Category
Electronics And Electrical Engineering
Distribution Limits
Public
Copyright
Other
Keywords
Single-event gate rupture SEGR vertical power MOSFET ionization LET

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