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Conventional and Microwave Joining of Silicon Carbide Using Displacement ReactionsMicrowave heating was used to join Silicon Carbide rods using a thin TiC /Si tape interlayer . Microwaves quickly heated the rods and tape to temperatures where solid-state displacement reactions between TiC and Si occurred.
Document ID
20060042047
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Kingsley, J.
Yiin, T.
Barmatz, M.
Date Acquired
August 23, 2013
Publication Date
January 1, 1995
Distribution Limits
Public
Copyright
Other
Keywords
Microwave heating

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