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Lasing characteristics of InAs quantum dot laers on InP substrateSingle-stack InAs self-assembled quantum dots (QD) lasers based on InP substrate have been grown by metalorganic vapor phase epitaxy. The narrow ridge waveguide lasers lased up to 260 K in continuous wave operation, and near room temperature in pulsed mode, with wavelengths between 1.59 to 1.74 mu m.
Document ID
20060042550
Acquisition Source
Jet Propulsion Laboratory
Document Type
Reprint (Version printed in journal)
External Source(s)
hdl:2014/37252
Authors
Yang, Y.
Qiu, D.
Uhl, R.
Chacon, R.
Date Acquired
August 23, 2013
Publication Date
January 1, 2003
Publication Information
Publication: Applied Physics Letters
Subject Category
Physics (General)
Distribution Limits
Public
Copyright
Other
Keywords
quantum dot semiconductor laser

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