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The effect of integration of Strontium-Bismuth-Tantalate capacitors onto SOI wafersWe report for the first time the successful integration of Strontium-Bismuth-Tantalate ferroelectric capacitors on an SOI Substrate. We have verified that the unique processing requirements of SBT capacitors does not affect the properties of the surrounding FD-SOI transistors, and, conversely, we have verified that the SOI processing does not affect the quality of the SBT capacitors.
Document ID
20060042976
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Joshi, Vikram
Ohno, Morifumo
Ida, Jiro
Nagatomo, Yoshiki
Strauss, Karl
Date Acquired
August 23, 2013
Publication Date
October 1, 2005
Meeting Information
Meeting: 2005 International SOI Conference
Location: Honolulu, HI
Country: United States
Start Date: October 3, 2005
End Date: October 6, 2005
Distribution Limits
Public
Copyright
Other
Keywords
SOI
ferroelectric
silicon-on-insulator

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