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passivation of mbe grown ingasb/inas superlattice photodiodesWe have performed wet chemical passivation tests on InGaSb/InAs superlattice photodiode structures grown molecular beam epitaxy. The details of the devices growth and characterization as well as the results of chemical passivation involving RuCl3 and H2SO4 with SiO2 dielectric depositions are presented.
Document ID
20060042982
Document Type
Conference Paper
External Source(s)
Authors
Hill, Cory J.
Keo, Sam S.
Mumolo, Jason M.
Gunapala, Sarath D.
Date Acquired
August 23, 2013
Publication Date
March 1, 2005
Meeting Information
International Society for Optical Engineering (SPIE) Defense and Security Symposium(Orlando, FL)
Distribution Limits
Public
Copyright
Other
Keywords
molecular beam
diode lasers
semiconductor superlattices
mid-infrared