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GaN-based micro pressure sensor for extreme environmentsThe linearity and reversibility in pressure response suggest that these newly investigated n-GaN/AlxGa(1-x)N/n-GaN devices are promising candidates for high-pressure sensor applications.
Document ID
20060043016
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Son, K. -A.
Liu, Y.
Ruden, P. P.
Xie, J.
Biyikli, N.
Moon, Y. -T.
Onojima, N.
Morkoc, H.
Date Acquired
August 23, 2013
Publication Date
October 1, 2005
Meeting Information
Meeting: IEEE Sensors 2005
Location: Irvine, CA
Country: United States
Start Date: October 31, 2005
End Date: November 4, 2005
Distribution Limits
Public
Copyright
Other
Keywords
extreme environment
GaN
microsensor
pressure

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