NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
Noise performance of 0.35-(mu)m SOI CMOS devices and micropower preamplifier following 63-MeV, 1-Mrad (Si) proton irradiationThis paper presents measured noise for 0.35(mu)m, silicon-on-insulator devices and a micropower preamplifier following 63-MeV, 1-Mrad (Si) proton irradiation. Flicker noise voltage, important for gyros having low frequency output, increases less than 32% after irradiation.
Document ID
20060043146
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
hdl:2014/38147
Authors
Binkley, D. M.
Hopper, C. E.
Cressler, J. D.
Mojarradi, M. M.
Blalock, B. J.
Date Acquired
August 23, 2013
Publication Date
July 1, 2004
Subject Category
Space Radiation
Meeting Information
Meeting: The Nuclear and Space Radiation Effects Conference
Location: Atlanta, GA
Country: United States
Start Date: July 19, 2004
End Date: July 23, 2004
Distribution Limits
Public
Copyright
Other
Keywords
low power electronics

Available Downloads

There are no available downloads for this record.

Related Records

There are no records associated with this record.
No Preview Available