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Record Details

Record 66 of 3720
Noise performance of 0.35-(mu)m SOI CMOS devices and micropower preamplifier following 63-MeV, 1-Mrad (Si) proton irradiation
External Online Source: hdl:2014/38147
Author and Affiliation:
Binkley, D. M.
Hopper, C. E.
Cressler, J. D.
Mojarradi, M. M.
Blalock, B. J.
Abstract: This paper presents measured noise for 0.35(mu)m, silicon-on-insulator devices and a micropower preamplifier following 63-MeV, 1-Mrad (Si) proton irradiation. Flicker noise voltage, important for gyros having low frequency output, increases less than 32% after irradiation.
Publication Date: Jul 01, 2004
Document ID:
20060043146
(Acquired Sep 15, 2006)
Subject Category: SPACE RADIATION
Document Type: Conference Paper
Meeting Information: The Nuclear and Space Radiation Effects Conference; July 19-23, 2004; Atlanta, GA; United States
Financial Sponsor: Jet Propulsion Lab., California Inst. of Tech.; Pasadena, CA, United States
Description: In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright
NASA Terms: CMOS; ELECTRIC POTENTIAL; FLICKER; GYROSCOPES; IRRADIATION; LOW FREQUENCIES; PREAMPLIFIERS; PROTON IRRADIATION; SOI (SEMICONDUCTORS)
Other Descriptors: LOW POWER ELECTRONICS
Availability Source: Other Sources
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