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Indium phosphide dobule heterojunction bipolar transistors with T-shaped emitter metal features having cutoff frequencies in excess of 200GHz
Document ID
20060043155
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Fung, Andy
Samoska, Lorene
Velebir, Jim
Siegel, Peter
Rodwell, Mark
Paidi, Vamsi
Griffith, Zach
Malik, Roger
Date Acquired
August 23, 2013
Publication Date
October 1, 2005
Meeting Information
Meeting: State-of-the-art Programs on Compound Semiconductors XLIII
Location: Los Angeles, CA
Country: United States
Start Date: October 16, 2005
End Date: October 21, 2005
Distribution Limits
Public
Copyright
Other
Keywords
HBT
transistor
submillimeter
THz

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