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Relative degradation of near infrared avalanche photodiodes from proton irradiationInGaAs and Ge avalanche photodiodes are compared for the effects of 63-MeV protons on dark current. Differences in displacement damage factors are discussed as they relate to structural differences between devices.
Document ID
20060043566
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Becker, Heidi
Johnston, Allan H.
Date Acquired
August 23, 2013
Publication Date
July 19, 2004
Subject Category
Space Radiation
Meeting Information
Meeting: IEEE/NPSS Nuclear & Space Radiation Effects Conference
Location: Atlanta, GA
Country: United States
Start Date: July 19, 2004
Distribution Limits
Public
Copyright
Other
Keywords
InGaAs
Ge
avalanche photodiades
protrons

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