NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb dopingA low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 (deg)C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices (CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.
Document ID
20060044036
Acquisition Source
Jet Propulsion Laboratory
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Blacksberg, Jordana
Hoenk, Michael E.
Elliott, S. Tom
Holland, Stephen E.
Nikzad, Shouleh
Date Acquired
August 23, 2013
Publication Date
December 15, 2005
Publication Information
Publication: Applied Physics Letters
Volume: 87
Subject Category
Physics (General)
Distribution Limits
Public
Copyright
Other
Keywords
charged coupled devices (CCDs)
molecular beam epitaxy (MBE)

Available Downloads

There are no available downloads for this record.
No Preview Available