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A back-illuminated megapixel CMOS image sensorIn this paper, we present the test and characterization results for a back-illuminated megapixel CMOS imager. The imager pixel consists of a standard junction photodiode coupled to a three transistor-per-pixel switched source-follower readout [1]. The imager also consists of integrated timing and control and bias generation circuits, and provides analog output. The analog column-scan circuits were implemented in such a way that the imager could be configured to run in off-chip correlated double-sampling (CDS) mode. The imager was originally designed for normal front-illuminated operation, and was fabricated in a commercially available 0.5 pn triple-metal CMOS-imager compatible process. For backside illumination, the imager was thinned by etching away the substrate was etched away in a post-fabrication processing step.
Document ID
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Pain, Bedabrata
Cunningham, Thomas
Nikzad, Shouleh
Hoenk, Michael
Jones, Todd
Wrigley, Chris
Hancock, Bruce
Date Acquired
August 23, 2013
Publication Date
June 9, 2005
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: IEEE Workshop on Charge-Coupled Devices and Advanced Image Sensors
Location: Karuizawa
Country: Japan
Start Date: June 9, 2005
End Date: June 11, 2005
Distribution Limits
Complementary Metal Oxide Semiconductor imager (CMOS)
back - illumination

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