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Design for ASIC reliability for low-temperature applicationsIn this paper, we present a methodology to design for reliability for low temperature applications without requiring process improvement. The developed hot carrier aging lifetime projection model takes into account both the transistor substrate current profile and temperature profile to determine the minimum transistor size needed in order to meet reliability requirements. The methodology is applicable for automotive, military, and space applications, where there can be varying temperature ranges. A case study utilizing this methodology is given to design for reliability into a custom application-specific integrated circuit (ASIC) for a Mars exploration mission.
Document ID
20060044221
Document Type
Conference Paper
External Source(s)
Authors
Chen, Yuan
Mojaradi, Mohammad
Westergard, Lynett
Billman, Curtis
Cozy, Scott
Burke, Gary
Kolawa, Elizabeth
Date Acquired
August 23, 2013
Publication Date
October 16, 2005
Meeting Information
International Integrated Reliability Workshop(Lake Tahoe, CA)
Distribution Limits
Public
Copyright
Other
Keywords
reliability
application-specific integrated circuit (ASIC)