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Fabrication of Nb/Al-N(sub x)/NbTiN junctions for SIS mixer applicationsWe discuss a processing technique for fabrication of superconductor-insulator-superconductor (SIS) junctions which typically exhibit a 3.5 mV sum-gap voltage.
Document ID
20060046130
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
hdl:2014/16101
Authors
Bumble, B.
LeDuc, H. G.
Stern, J. A.
Megerian, K. G.
Date Acquired
August 23, 2013
Publication Date
September 15, 2000
Distribution Limits
Public
Copyright
Other
Keywords
AIN Niobium NBTiN superconductor devices SIS mixers THz detectors

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