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Comparison of Above Bandgap Laser and MeV Ion Induced Single Event Transients in High-Speed Si Photonic DevicesWe illustrate inherent differences between Single Event Transients generated by an above bandgap picosecond lasers and MeV heavy ions by comparing transient currents collected with an ion microbeam and picosecond laser with varying track waist.
Document ID
20060051628
Acquisition Source
Jet Propulsion Laboratory
Document Type
Preprint (Draft being sent to journal)
External Source(s)
Authors
Laird, Jamie S.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Hirao, Toshio
(Japan Atomic Energy Research Inst. Takasaki, Japan)
Onoda, Shinobu
(Japan Atomic Energy Research Inst. Takasaki, Japan)
Itoh, Hisayoshi
(Japan Atomic Energy Research Inst. Takasaki, Japan)
Edmonds, Larry
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Johnston, Allan
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
August 23, 2013
Publication Date
January 1, 2006
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: IEEE Transaction on Nuclear Science and Space Radiation Effects Conference
Location: Jacksonville, FL
Country: United States
Start Date: July 17, 2006
End Date: July 21, 2006
Sponsors: Institute of Electrical and Electronics Engineers
Distribution Limits
Public
Copyright
Other
Keywords
TCAD
pulsed lasers
MeV inomicrobeam
si pin

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