Reliability of Cascaded THz Frequency Chains with Planar GaAs Circuits

Planar GaAs Schottky diodes will be utilized for all of the LO chains on the HIPI instrument for the Herschel Space Observatory. A better understanding of device degradation mechanisms is desirable in order to specify environmental and operational conditions that do not reduce device life times. Failures and degradation associated with ESD (Electrostatic Discharge), high temperatures, DC currents and RF induced current and heating have been investigated. The goal is to establish a procedure to obtain the safe operating range for a given frequency multiplier.