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Growth and Properties of Lattice Matched GaAsSbN Epilayer on GaAs for Solar Cell ApplicationsThe growth and properties of GaAsSbN single quantum wells (SQWs) are investigated in this work. The heterostructures were grown on GaAs substrates in an elemental solid source molecular beam epitaxy (MBE) system assisted with a RF plasma nitrogen source. A systematic study has been carried out to determine the influence of various growth conditions, such as the growth temperature and the source shutter-opening sequence, on the quality of the grown layers and the incorporation of N and Sb. The effects of ex situ and in situ annealing under As overpressure on the optical properties of the layers have also been investigated. Substrate temperature in the range of 450-470 C was found to be optimum. Simultaneous opening of the source shutters was found to yield sharper QW interfaces. N and Sb incorporations were found to depend strongly upon substrate temperatures and source shutter opening sequences. A significant increase in PL intensity with a narrowing of PL line shape and blue shift in emission energy were observed on annealing the GaAsSbN/GaAs SQW, with in situ annealing under As overpressure providing better results, compared to ex situ annealing.
Document ID
20070020322
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
Bharatan, Sudhakar
(North Carolina Agricultural and Technical State Univ. Greensboro, NC, United States)
Iyer, Shanthi
(North Carolina Agricultural and Technical State Univ. Greensboro, NC, United States)
Matney, Kevin
(Bede Scientific, Inc. Englewood, CO, United States)
Collis, Ward J.
(North Carolina Agricultural and Technical State Univ. Greensboro, NC, United States)
Nunna Kalyan
(North Carolina Agricultural and Technical State Univ. Greensboro, NC, United States)
Li, Jia
(North Carolina Agricultural and Technical State Univ. Greensboro, NC, United States)
Wu, Liangjin
(North Carolina Agricultural and Technical State Univ. Greensboro, NC, United States)
McGuire, Kristopher
(North Carolina Univ. Chapel Hill, NC, United States)
McNeil, Laurie E.
(North Carolina Univ. Chapel Hill, NC, United States)
Date Acquired
August 23, 2013
Publication Date
January 1, 2006
Publication Information
Publication: Materials Research Society Symposium Proceedings
Volume: 891
Subject Category
Physics (General)
Report/Patent Number
Paper No. 0891-EE10-36
Funding Number(s)
CONTRACT_GRANT: NAG3-2782
Distribution Limits
Public
Copyright
Other

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