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hot-electron bolometer mixers on silicon-on-insulator substrates for terahertz frequenciesA terahertz Hot-Electron Bolometer (HEB) mixer design using device substrates based on Silicon-On-Insulator (SOI) technology is described. This substrate technology allows very thin chips (6 pm) with almost arbitrary shape to be manufactured, so that they can be tightly fitted into a waveguide structure and operated at very high frequencies with only low risk for power leakages and resonance modes. The NbTiN-based bolometers are contacted by gold beam-leads, while other beamleads are used to hold the chip in place in the waveguide test fixture. The initial tests yielded an equivalent receiver noise temperature of 3460 K double-sideband at a local oscillator frequency of 1.462 THz and an intermediate frequency of 1.4 GHz.
Document ID
20070023901
Document Type
Preprint (Draft being sent to journal)
External Source(s)
Authors
Skalare, Anders
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Stern, Jeffrey
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Bumble, Bruce
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Maiwald, Frank
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
August 23, 2013
Publication Date
May 2, 2005
Subject Category
Electronics and Electrical Engineering
Distribution Limits
Public
Copyright
Other
Keywords
bolometer
mixers
Hot-Electron Bolometer (HEB)
superconducting
submillimeter spectrometers
heterodyne
Silicon-On-Insulator (SOI)