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Spatial light modulation in compound semiconductor materialsSpatial light modulation (22) in a III-V single crystal (12), e.g., gallium arsenide, is achieved using the photorefractive effect. Polarization rotation created by beam coupling is utilized in one embodiment. In particular, information (16)on a control beam (14) incident on the crystal is transferred to an input beam (10), also incident on the crystal. An output beam (18) modulated in intensity is obtained by passing the polarization-modulated input beam through a polarizer (20).
Document ID
20080008794
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Cheng, Li-Jen
Gheen, Gregory O.
Partovi, Afshin
Date Acquired
August 24, 2013
Publication Date
February 6, 1990
Subject Category
Solid-State Physics
Report/Patent Number
Patent Application Number: US-Patent-Appl-SN-172007
Patent Number: US-Patent-4,898,436
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-4,898,436
Patent Application
US-Patent-Appl-SN-172007
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