NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Ultra-Low-Temperature Homoepitaxial Growth of Sb-Doped SiliconAn ultra-low-temperature process for homoepitaxial growth of high-quality, surface-confined, Sb-doped silicon layers is presented. Non-equilibrium growth by molecular beam epitaxy (MBE) is used to achieve dopant incorporation in excess of 2x10(exp 14) per sq cm in a thin, surface-confined layer. Sb surface segregation larger than expected from theoretical models was observed, in agreement with other experimental works. Furthermore, this work details an entirely low-temperature process (less than 450 degree C) that can be applied to fully processed and aluminum-metallized silicon devices. One application of this process is the formation of a back-surface electrode for back-illuminated high-purity silicon imaging arrays.
Document ID
20080022190
Acquisition Source
Jet Propulsion Laboratory
Document Type
Preprint (Draft being sent to journal)
Authors
Blacksberg, Jordana
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Hoenk, Michael E.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Nikzad, Shouleh
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
August 24, 2013
Publication Date
November 4, 2005
Publication Information
Publication: Journal of Crystal Growth
Volume: 285
Issue: 4
Subject Category
Chemistry And Materials (General)
Distribution Limits
Public
Copyright
Other
Keywords
Molecular beam epitaxy
Delta doping
Surface segregation
Semiconducting silicon

Available Downloads

There are no available downloads for this record.
No Preview Available