Acquisition Source
Jet Propulsion Laboratory
Document Type
Preprint (Draft being sent to journal)
Authors
Blacksberg, Jordana (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States) Hoenk, Michael E. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States) Nikzad, Shouleh (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States) Date Acquired
August 24, 2013
Publication Date
November 4, 2005
Publication Information
Publication: Journal of Crystal Growth
Volume: 285
Issue: 4
Subject Category
Chemistry And Materials (General) Distribution Limits
Public
Keywords
Molecular beam epitaxyDelta dopingSurface segregationSemiconducting silicon