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IR DirectFET Extreme Environments Evaluation Final ReportIn 2007, International Rectifier (IR) introduced a new version of its DirectFET metal oxide semiconductor field effect transistor (MOSFET) packaging. The new version (referred to as 'Version 2') enhances device moisture resistance, makes surface mount (SMT) assembly of these devices to printed wiring boards (PWBs) more repeatable, and subsequent assembly inspection simpler. In the present study, the National Aeronautics Space Administration (NASA) Jet Propulsion Laboratory (JPL), in collaboration with Stellar Microelectronics (Stellar), continued an evaluation of the DirectFET that they started together in 2006. The present study focused on comparing the two versions of the DirectFET and examining the suitability of the DirectFET devices for space applications. This study evaluated both versions of two DirectFET packaged devices that had both been shown in the 2006 study to have the best electrical and thermal properties: the IRF6635 and IRF6644. The present study evaluated (1) the relative electrical and thermal performance of both versions of each device, (2) the performance through high reliability testing, and (3) the performance of these devices in combination with a range of alternate solder alloys in the extreme thermal environments of deep space....
Document ID
20080025037
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other
External Source(s)
Authors
Burmeister, Martin
(Stellar Microelectronics, Inc. Valencia, CA, United States)
Mottiwala, Amin
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
August 24, 2013
Publication Date
June 1, 2008
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
JPLPubl-08-23
Funding Number(s)
WBS: WBS 949904.01.11.20
Distribution Limits
Public
Copyright
Other
Keywords
electronic parts packaging
metal oxide semiconductor field effect transistor (MOSFET)

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