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Device-Orientation Effects on Multiple-Bit Upset in 65-nm SRAMsHeavy ion irradiations have been performed: a) SEU varies little with angle of ion incidence b) MBU depend on the device orientation. The MBU response depends on the well orientation of the device. MRED simulation of an omni-directional GEO environment shows the MBU response to be a combination of response from different orientations. Testing and simulation must account for multiple orientations.
Document ID
20080034465
Acquisition Source
Goddard Space Flight Center
Document Type
Presentation
Authors
Tipton, Alan D. (Vanderbilt Univ. United States)
Pellish, Jonathan A. (Vanderbilt Univ. United States)
Hutson, John M. (Vanderbilt Univ. United States)
Baumann, Robert (Texas Instruments, Inc. United States)
Deng, Xiaowei (Texas Instruments, Inc. United States)
Marshall, Andrew (Texas Instruments, Inc. United States)
Xapsos, Michael A. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Kim, Hak S. (Mei Technology Corp. TX, United States)
Friendlich, Mark R. (Mei Technology Corp. TX, United States)
Campola, Michael J. (Mei Technology Corp. TX, United States)
Seidleck, Christina M. (Mei Technology Corp. TX, United States)
LaBel, Ken A. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Mendenhall, Marcus H. (Vanderbilt Univ. United States)
Reed, Robert A. (Vanderbilt Univ. United States)
Schrimpf, Ronald D. (Vanderbilt Univ. United States)
Weller, Robert A. (Vanderbilt Univ. United States)
Date Acquired
August 24, 2013
Publication Date
January 1, 2008
Subject Category
Physics (General)
Meeting Information
Meeting: International Electrical and Electronicics Engineering; Nuclear and Space Radiation and Space Radiation Effects Conference (NSREC)
Location: Tucson, AZ
Country: United States
Start Date: July 14, 2008
End Date: July 18, 2008
Distribution Limits
Public
Copyright
Public Use Permitted.

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