NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
First On-Wafer Power Characterization of MMIC Amplifiers at Sub-Millimeter Wave FrequenciesRecent developments in semiconductor technology have enabled advanced submillimeter wave (300 GHz) transistors and circuits. These new high speed components have required new test methods to be developed for characterizing performance, and to provide data for device modeling to improve designs. Current efforts in progressing high frequency testing have resulted in on-wafer-parameter measurements up to approximately 340 GHz and swept frequency vector network analyzer waveguide measurements to 508 GHz. On-wafer noise figure measurements in the 270-340 GHz band have been demonstrated. In this letter we report on on-wafer power measurements at 330 GHz of a three stage amplifier that resulted in a maximum measured output power of 1.78mW and maximum gain of 7.1 dB. The method utilized demonstrates the extension of traditional power measurement techniques to submillimeter wave frequencies, and is suitable for automated testing without packaging for production screening of submillimeter wave circuits.
Document ID
20090004437
Acquisition Source
Jet Propulsion Laboratory
Document Type
Reprint (Version printed in journal)
Authors
Fung, A. K.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Gaier, T.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Samoska, L.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Deal, W. R.
(Northrop Grumman Corp. Redondo Beach, CA, United States)
Radisic, V.
(Northrop Grumman Corp. Redondo Beach, CA, United States)
Mei, X. B.
(Northrop Grumman Corp. Redondo Beach, CA, United States)
Yoshida, W.
(Northrop Grumman Corp. Redondo Beach, CA, United States)
Liu, P. S.
(Northrop Grumman Corp. Redondo Beach, CA, United States)
Uyeda, J.
(Northrop Grumman Corp. Redondo Beach, CA, United States)
Barsky, M.
(Northrop Grumman Corp. Redondo Beach, CA, United States)
Lai, R.
(Northrop Grumman Corp. Redondo Beach, CA, United States)
Date Acquired
August 24, 2013
Publication Date
June 6, 2008
Publication Information
Publication: IEEE Microwave and Wireless Components Letters, Vol. 18, No. 6, June 2008
Publisher: Institute of Electrical and Electronics Engineers
Volume: 18
Issue: 6
ISSN: 1531-1309
Subject Category
Electronics And Electrical Engineering
Funding Number(s)
CONTRACT_GRANT: W911QX-06-C-0050
Distribution Limits
Public
Copyright
Other
Keywords
monolithic microwave integrated circircuit
amplifier
MM-Wave
power measurement

Available Downloads

There are no available downloads for this record.
No Preview Available