NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Silicon-On-Insulator (SOI) Devices and Mixed-Signal Circuits for Extreme Temperature ApplicationsElectronic systems in planetary exploration missions and in aerospace applications are expected to encounter extreme temperatures and wide thermal swings in their operational environments. Electronics designed for such applications must, therefore, be able to withstand exposure to extreme temperatures and to perform properly for the duration of the missions. Electronic parts based on silicon-on-insulator (SOI) technology are known, based on device structure, to provide faster switching, consume less power, and offer better radiation-tolerance compared to their silicon counterparts. They also exhibit reduced current leakage and are often tailored for high temperature operation. However, little is known about their performance at low temperature. The performance of several SOI devices and mixed-signal circuits was determined under extreme temperatures, cold-restart, and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of these devices for use in space exploration missions under extreme temperatures. The experimental results obtained on selected SOI devices are presented and discussed in this paper.
Document ID
20090004582
Document Type
Conference Paper
Authors
Patterson, Richard (NASA Glenn Research Center Cleveland, OH, United States)
Hammoud, Ahmad (ASRC Aerospace Corp. Cleveland, OH, United States)
Elbuluk, Malik (Akron Univ. Akron, OH, United States)
Date Acquired
August 24, 2013
Publication Date
June 15, 2008
Subject Category
Electronics and Electrical Engineering
Report/Patent Number
E-16850
Meeting Information
39th IEEE Power Electronics Specialists Conference(Rhodes)
Funding Number(s)
WBS: WBS 939904.01.03.02.01
Distribution Limits
Public
Copyright
Public Use Permitted.

Available Downloads

NameType 20090004582.pdf STI