NTRS - NASA Technical Reports Server
Performance of the THS4302 and the Class V Radiation-Tolerant THS4304-SP Silicon Germanium Wideband Amplifiers at Extreme TemperaturesThis report discusses the performance of silicon germanium, wideband gain amplifiers under extreme temperatures. The investigated devices include Texas Instruments THS4304-SP and THS4302 amplifiers. Both chips are manufactured using the BiCom3 process based on silicon germanium technology along with silicon-on-insulator (SOI) buried oxide layers. The THS4304-SP device was chosen because it is a Class V radiation-tolerant (150 kRad, TID silicon), voltage-feedback operational amplifier designed for use in high-speed analog signal applications and is very desirable for NASA missions. It operates with a single 5 V power supply . It comes in a 10-pin ceramic flatpack package, and it provides balanced inputs, low offset voltage and offset current, and high common mode rejection ratio. The fixed-gain THS4302 chip, which comes in a 16-pin leadless package, offers high bandwidth, high slew rate, low noise, and low distortion . Such features have made the amplifier useful in a number of applications such as wideband signal processing, wireless transceivers, intermediate frequency (IF) amplifier, analog-to-digital converter (ADC) preamplifier, digital-to-analog converter (DAC) output buffer, measurement instrumentation, and medical and industrial imaging.
Other - Other
Patterson, Richard L. (NASA Glenn Research Center Cleveland, OH, United States) Elbuluk, Malik (Akron Univ. Akron, OH, United States) Hammoud, Ahmad (ASRC Aerospace Corp. Cleveland, OH, United States) VanKeuls, Frederick W. (Ohio Aerospace Inst. Cleveland, OH, United States)
August 24, 2013
January 1, 2009
Electronics And Electrical Engineering
WBS: WBS 939904.11.03.01
Public Use Permitted.
Available Downloads 20090004673.pdf STI