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Performance of the THS4302 and the Class V Radiation-Tolerant THS4304-SP Silicon Germanium Wideband Amplifiers at Extreme TemperaturesThis report discusses the performance of silicon germanium, wideband gain amplifiers under extreme temperatures. The investigated devices include Texas Instruments THS4304-SP and THS4302 amplifiers. Both chips are manufactured using the BiCom3 process based on silicon germanium technology along with silicon-on-insulator (SOI) buried oxide layers. The THS4304-SP device was chosen because it is a Class V radiation-tolerant (150 kRad, TID silicon), voltage-feedback operational amplifier designed for use in high-speed analog signal applications and is very desirable for NASA missions. It operates with a single 5 V power supply [1]. It comes in a 10-pin ceramic flatpack package, and it provides balanced inputs, low offset voltage and offset current, and high common mode rejection ratio. The fixed-gain THS4302 chip, which comes in a 16-pin leadless package, offers high bandwidth, high slew rate, low noise, and low distortion [2]. Such features have made the amplifier useful in a number of applications such as wideband signal processing, wireless transceivers, intermediate frequency (IF) amplifier, analog-to-digital converter (ADC) preamplifier, digital-to-analog converter (DAC) output buffer, measurement instrumentation, and medical and industrial imaging.
Document ID
20090004673
Document Type
Other - Other
Authors
Patterson, Richard L. (NASA Glenn Research Center Cleveland, OH, United States)
Elbuluk, Malik (Akron Univ. Akron, OH, United States)
Hammoud, Ahmad (ASRC Aerospace Corp. Cleveland, OH, United States)
VanKeuls, Frederick W. (Ohio Aerospace Inst. Cleveland, OH, United States)
Date Acquired
August 24, 2013
Publication Date
January 1, 2009
Subject Category
Electronics and Electrical Engineering
Funding Number(s)
WBS: WBS 939904.11.03.01
CONTRACT_GRANT: NNC06BA07B
Distribution Limits
Public
Copyright
Public Use Permitted.

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