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Dark Current Degradation of Near Infrared Avalanche Photodiodes from Proton IrradiationInGaAs and Ge avalanche photodiodes (APDs) are examined for the effects of 63-MeV protons on dark current. Dark current increases were large and similar to prior results for silicon APDs, despite the smaller size of InGaAs and Ge devices. Bulk dark current increases from displacement damage in the depletion regions appeared to be the dominant contributor to overall dark current degradation. Differences in displacement damage factors are discussed as they relate to structural and material differences between devices.
Document ID
20090011225
Acquisition Source
Jet Propulsion Laboratory
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Becker, Heidi N.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Johnston, Allan H.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
August 24, 2013
Publication Date
December 6, 2004
Publication Information
Publication: IEEE Transactions On Nuclear Science
Volume: 51
Issue: 6
ISSN: 0018-9499
Subject Category
Electronics And Electrical Engineering
Distribution Limits
Public
Copyright
Other
Keywords
indium compounds
proton effects
optical receivers
elemental semiconductors

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