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An Overview of Wide Bandgap Silicon Carbide Sensors and Electronics Development at NASA Glenn Research CenterA brief overview is presented of the sensors and electronics development work ongoing at NASA Glenn Research Center which is intended to meet the needs of future aerospace applications. Three major technology areas are discussed: 1) high temperature SiC electronics, 2) SiC gas sensor technology development, and 3) packaging of harsh environment devices. Highlights of this work include world-record operation of SiC electronic devices including 500?C JFET transistor operation with excellent properties, atomically flat SiC gas sensors integrated with an on-chip temperature detector/heater, and operation of a packaged AC amplifier. A description of the state-of-the-art is given for each topic. It is concluded that significant progress has been made and that given recent advancements the development of high temperature smart sensors is envisioned.
Document ID
20090013999
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
Hunter, Gary W.
(NASA Glenn Research Center Cleveland, OH, United States)
Neudeck, Philip G.
(NASA Glenn Research Center Cleveland, OH, United States)
Beheim, Glenn M.
(NASA Glenn Research Center Cleveland, OH, United States)
Okojie, Robert S.
(NASA Glenn Research Center Cleveland, OH, United States)
Chen, Liangyu
(Ohio Aerospace Inst. Cleveland, OH, United States)
Spry, D.
(Ohio Aerospace Inst. Cleveland, OH, United States)
Trunek, A.
(Ohio Aerospace Inst. Cleveland, OH, United States)
Date Acquired
August 24, 2013
Publication Date
October 7, 2007
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
E-16985
Meeting Information
Meeting: 212th ECS Meeting
Location: Washington, DC
Country: United States
Start Date: October 7, 2007
End Date: October 12, 2007
Funding Number(s)
WBS: WBS 645846.02.07.03.11.02.01
Distribution Limits
Public
Copyright
Public Use Permitted.
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