NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
SOI N-Channel Field Effect Transistors, CHT-NMOS80, for Extreme TemperaturesExtreme temperatures, both hot and cold, are anticipated in many of NASA space exploration missions as well as in terrestrial applications. One can seldom find electronics that are capable of operation under both regimes. Even for operation under one (hot or cold) temperature extreme, some thermal controls need to be introduced to provide appropriate ambient temperatures so that spacecraft on-board or field on-site electronic systems work properly. The inclusion of these controls, which comprise of heating elements and radiators along with their associated structures, adds to the complexity in the design of the system, increases cost and weight, and affects overall reliability. Thus, it would be highly desirable and very beneficial to eliminate these thermal measures in order to simplify system's design, improve efficiency, reduce development and launch costs, and improve reliability. These requirements can only be met through the development of electronic parts that are designed for proper and efficient operation under extreme temperature conditions. Silicon-on-insulator (SOI) based devices are finding more use in harsh environments due to the benefits that their inherent design offers in terms of reduced leakage currents, less power consumption, faster switching speeds, good radiation tolerance, and extreme temperature operability. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. The objective of this work was to evaluate the performance of a new commercial-off-the-shelf (COTS) SOI parts over an extended temperature range and to determine the effects of thermal cycling on their performance. The results will establish a baseline on the suitability of such devices for use in space exploration missions under extreme temperatures, and will aid mission planners and circuit designers in the proper selection of electronic parts and circuits. The electronic part investigated in this work comprised of a CHT-NMOS80 high temperature N-channel MOSFET (metal-oxide semiconductor field-effect transistor) device that was manufactured by CISSOID. This high voltage, medium-power transistor is fabricated using SOI processes and is designed for extreme wide temperature applications such as geothermal well logging, aerospace and avionics, and automotive industry. It has a high DC current capability and is specified for operation in the temperature range of -55 C to +225 C
Document ID
20090014040
Document Type
Other - Other
Authors
Patterson, Richard L. (NASA Glenn Research Center Cleveland, OH, United States)
Hammoud, Almad (ASRC Aerospace Corp. Cleveland, OH, United States)
Date Acquired
August 24, 2013
Publication Date
March 11, 2009
Subject Category
Electronics and Electrical Engineering
Report/Patent Number
E-16977
Funding Number(s)
CONTRACT_GRANT: NAS3-00145
WBS: WBS 724297.40.43.03.01
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Available Downloads

NameType 20090014040.pdf STI