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Radiation Tests on 2Gb NAND Flash MemoriesWe report on SEE and TID tests of highly scaled Samsung 2Gbits flash memories. Both in-situ and biased interval irradiations were used to characterize the response of the total accumulated dose failures. The radiation-induced failures can be categorized as followings: single event upset (SEU) read errors in biased and unbiased modes, write errors, and single-event-functional-interrupt (SEFI) failures.
Document ID
20090014090
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
hdl:2014/41139
doi:10.1109/REDW.2006.295479
Authors
Nguyen, Duc N. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Guertin, Steven M. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Patterson, J. D. (Hutchinson (Fred) Cancer Research Center Seattle, WA, United States)
Date Acquired
August 24, 2013
Publication Date
July 1, 2006
Subject Category
Electronics And Electrical Engineering
Distribution Limits
Public
Copyright
Other
Keywords
NAND circuits
radiation
flash memories

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