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band to band tunneling (bbt) induced leakage current enhancement in irradiated fully depleted soi devicesWe propose a model, validated with simulations, describing how band-to-band tunneling (BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices. The dependence of drain current on gate voltage, including the apparent transition to a high current regime is explained.
Document ID
20090019030
Document Type
Conference Paper
External Source(s)
Authors
Adell, Phillipe C.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Barnaby, H. J.
(Arizona State Univ. Tempe, AZ, United States)
Schrimpf, R. D.
(Vanderbilt Univ. Nashville, TN, United States)
Vermeire, B.
(Arizona State Univ. Tempe, AZ, United States)
Date Acquired
August 24, 2013
Publication Date
June 23, 2007
Subject Category
Electronics and Electrical Engineering
Meeting Information
Nuclear and Space Radiation Effects Conference (NSREC)(Honolulu, HI)
Distribution Limits
Public
Copyright
Other
Keywords
high current regime
fully depleted
total ionizing dose
band to band tunneling
silicon on insulator (SOI)
gate induced drain leakage (GIDL)