NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
Current Leakage Evolution in Partially Gate Raptured Power MOSFETsIt has been observed that power MOSFETs can experience an SEGR and continue to function with altered parameters. We propose that there are three different types of SEGR modes; the micro-break, the thermal runaway, and the avalanche breakdown. Data that demonstrates these stages of device failure are presented as well as a proposed model for the micro-break. Brief discussions of the other modes, based on analysis combined with our interpretations of the older literature, are also given.
Document ID
20090035569
Acquisition Source
Jet Propulsion Laboratory
Document Type
Preprint (Draft being sent to journal)
External Source(s)
doi:10.1109/TNS.2008.2001008
hdl:2014/41401
Authors
Scheick, Leif (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Edmonds, Larry (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Selva, Luis (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Chen, Yuan (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
August 24, 2013
Publication Date
August 1, 2008
Publication Information
Publication: IEEE Transactions On Nuclear Science
Publisher: Institute of Electrical and Electronics Engineers
Volume: 55
Issue: 4
Subject Category
Electronics And Electrical Engineering
Distribution Limits
Public
Copyright
Other
Keywords
metal oxide semiconductor field-effect transistors (MOSFET)
avalanche breakdown
single-event gate rupture (SEGR)

Available Downloads

There are no available downloads for this record.

Related Records

There are no records associated with this record.
No Preview Available