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Carbon Nanotube Switches for Communication and Memory ApplicationsLateral CNT Switches: a) dc CNT switches were demonstrated to operate at low voltages, low powers and high speeds. b) RF simulations of switch in series configuration with metallized tube yielded good RF performance 1) Isolation simulated to be approx. 20 dB at 100 GHz. 2) Insertion loss simulated to be < 0.5 dB at 100 GHz. Vertical CNT Switches: a) Thermal CVD was used to mechanically constrain tubes in nanopockets; tubes not self-supporting. b) Demonstrated growth of vertically aligned arrays and single-few MWNTs using dc PECVD with Ni catalyst using optical lithography.
Document ID
20090040160
Acquisition Source
Jet Propulsion Laboratory
Document Type
Presentation
External Source(s)
Authors
Kaul, Anupama B.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Epp, Larry
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Wong, Eric W.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Kowalczyk, Robert
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
August 24, 2013
Publication Date
March 18, 2008
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: SPIE 2008 Micro (MEMS) and Nanotechnologies for Space, Defense and Security III
Location: Orlando, FL
Country: United States
Start Date: March 18, 2008
Sponsors: International Society for Optical Engineering
Distribution Limits
Public
Copyright
Other
Keywords
memory devices
nanotube switches
electromechanical switches
NEMS
nanoelectronics
RF switches
RF MEMS

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