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Performance of an SOI Boot-Strapped Full-Bridge MOSFET Driver, Type CHT-FBDR, under Extreme TemperaturesElectronic systems designed for use in deep space and planetary exploration missions are expected to encounter extreme temperatures and wide thermal swings. Silicon-based devices are limited in their wide-temperature capability and usually require extra measures, such as cooling or heating mechanisms, to provide adequate ambient temperature for proper operation. Silicon-On-Insulator (SOI) technology, on the other hand, lately has been gaining wide spread use in applications where high temperatures are encountered. Due to their inherent design, SOI-based integrated circuit chips are able to operate at temperatures higher than those of the silicon devices by virtue of reducing leakage currents, eliminating parasitic junctions, and limiting internal heating. In addition, SOI devices provide faster switching, consume less power, and offer improved radiation-tolerance. Very little data, however, exist on the performance of such devices and circuits under cryogenic temperatures. In this work, the performance of an SOI bootstrapped, full-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.
Document ID
20090042372
Document Type
Other
Authors
Patterson, Richard (NASA Glenn Research Center Cleveland, OH, United States)
Hammoud, Ahmad (ASRC Aerospace Corp. Cleveland, OH, United States)
Date Acquired
August 24, 2013
Publication Date
September 1, 2009
Subject Category
Electronics and Electrical Engineering
Report/Patent Number
E-17166-Inf
Funding Number(s)
WBS: WBS 724297.40.43.03.01
CONTRACT_GRANT: NNC06BA07B
Distribution Limits
Public
Copyright
Public Use Permitted.

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