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A Wide Range Temperature Sensor Using SOI TechnologySilicon-on-insulator (SOI) technology is becoming widely used in integrated circuit chips for its advantages over the conventional silicon counterpart. The decrease in leakage current combined with lower power consumption allows electronics to operate in a broader temperature range. This paper describes the performance of an SOIbased temperature sensor under extreme temperatures and thermal cycling. The sensor comprised of a temperature-to-frequency relaxation oscillator circuit utilizing an SOI precision timer chip. The circuit was evaluated under extreme temperature exposure and thermal cycling between -190 C and +210 C. The results indicate that the sensor performed well over the entire test temperature range and it was able to re-start at extreme temperatures.
Document ID
20090042373
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
Patterson, Richard L.
(NASA Glenn Research Center Cleveland, OH, United States)
Elbuluk, Malik E.
(Akron Univ. Akron, OH, United States)
Hammoud, Ahmad
(ASRC Aerospace Corp. Cleveland, OH, United States)
Date Acquired
August 24, 2013
Publication Date
May 24, 2009
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
E-17167-P
Funding Number(s)
WBS: WBS 724297.40.43.03.01
CONTRACT_GRANT: NNC06BA07B
Distribution Limits
Public
Copyright
Public Use Permitted.
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