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Assessment of SOI AND Gate, Type CHT-7408, for Operation in Extreme Temperature EnvironmentsElectronic parts based on silicon-on-insulator (SOI) technology are finding widespread applications due to their ability to operate in harsh environments and the benefits they offer as compared to their silicon counterparts. Due to their construction, they are tailored for high temperature operation and show good tolerance to radiation events. In addition, their inherent design lessens the formation of parasitic junctions, thereby reducing leakage currents, decreasing power consumption, and enhancing speed. These devices are typically rated in temperature capability from -55 C to about +225 C, and their characteristics over this temperature range are documented in data sheets. Since electronics in some of NASA space exploration missions are required to operate under extreme temperature conditions, both cold and hot, their characteristic behavior within the full temperature spectrum must be determined to establish suitability for use in space applications. The effects of extreme temperature exposure on the performance of a new commercial-off-the-shelf (COTS) SOI AND gate device were evaluated in this work. The high temperature, quad 2-inputs AND gate device, which was recently introduced by CISSOID, is fabricated using a CMOS SOI process. Some of the specifications of the CHT-7408 chip are listed in a table. By supplying a constant DC voltage to one gate input and a 10 kHz square wave into the other associated gate input, the chip was evaluated in terms of output response, output rise (t(sub r)) and fall times (tf), and propagation delays (using a 50% level between input and output during low to high (tPLH) and high to low (tPHL) transitions). The supply current of the gate circuit was also obtained. These parameters were recorded at various test temperatures between -195 C and +250 C using a Sun Systems environmental chamber programmed at a temperature rate of change of 10 C/min. In addition, the effects of thermal cycling on this chip were determined by exposing it to a total of 12 cycles between -195 C and +250 C. Following the cycling activity, measurements were performed again at the test temperatures of -195 C, +21 C, and +250 C.
Document ID
20090042583
Document Type
Other
Authors
Patterson, Richard (NASA Glenn Research Center Cleveland, OH, United States)
Hammoud, Ahmad (ASRC Aerospace Corp. Cleveland, OH, United States)
Dones, Keishla Rivera (Puerto Rico Univ. Mayaguez, Puerto Rico)
Date Acquired
August 24, 2013
Publication Date
August 1, 2009
Subject Category
Electronics and Electrical Engineering
Report/Patent Number
E-17162
Funding Number(s)
CONTRACT_GRANT: NNC06BA07B
CONTRACT_GRANT: CASX22009D
WBS: WBS 724297.40.43.03.01
Distribution Limits
Public
Copyright
Public Use Permitted.

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