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Flash Memory Reliability: Read, Program, and Erase Latency Versus Endurance CyclingThis report documents the efforts and results of the fiscal year (FY) 2010 NASA Electronic Parts and Packaging Program (NEPP) task for nonvolatile memory (NVM) reliability. This year's focus was to measure latency (read, program, and erase) of NAND Flash memories and determine how these parameters drift with erase/program/read endurance cycling.
Document ID
20110011279
Document Type
Other
External Source(s)
Authors
Heidecker, Jason (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
August 25, 2013
Publication Date
November 1, 2010
Subject Category
Computer Operations and Hardware
Report/Patent Number
JPL-Publ-10-19
Funding Number(s)
WBS: WBS 724297.40.49
PROJECT: JPL Proj. 103928
Distribution Limits
Public
Copyright
Other
Keywords
latency
NAND Flash
endurancy cycling
flash memory reliability
multi-level-cell (MLC)