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Investigation of the Semicoa SCF9550 and the International Rectifier IRHM57260SE for Single-Event Gate Rapture and Single-Event Burnout : NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission AssuranceSingle-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. TheSCF9550 from Semicoa and the IRHM57260SE from International Rectifier were tested to NASA test condition/standards and requirements.The IRHM57260SE performed much better when compared to previous testing. These initial results confirm that parts from the Temecula line are marginally comparable to the El Segundo line. The SCF9550 from Semicoa was also tested and represents the initial parts offering from this vendor. Both parts experienced single-event gate rupture (SEGR) and single-event burnout (SEB). All of the SEGR was from gate to drain.
Document ID
20110023678
Document Type
Other
External Source(s)
Authors
Scheick, Leif (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
August 25, 2013
Publication Date
September 1, 2011
Subject Category
Electronics and Electrical Engineering
Report/Patent Number
JPL-Publ-11-7 9/11
Funding Number(s)
WBS: WBS 939904.01.11.30
Distribution Limits
Public
Copyright
Other
Keywords
Single Event Gate Rupture
Power MOSFETs
Single Event Burnout,