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SiC growth by Solvent-Laser Heated Floating ZoneIn an effort to grow single crystal SiC fibers for seed crystals the following two growth methods have been coupled in this work: traveling solvent and laser heated floating zone to create the solvent-laser heated floating zone (Solvent-LHFZ) crystal growth method. This paper discusses the results of these initial experiments, which includes: source material, laser heating, and analysis of the first ever Solvent-LHFZ SiC crystals (synchrotron white beam x-ray topography confirmed).
Document ID
20120012886
Acquisition Source
Glenn Research Center
Document Type
Reprint (Version printed in journal)
Authors
Woodworth, Andrew A.
(NASA Glenn Research Center Cleveland, OH, United States)
Neudeck, Philip G.
(NASA Glenn Research Center Cleveland, OH, United States)
Sayir, Ali
(NASA Glenn Research Center Cleveland, OH, United States)
Spry, David J.
(NASA Glenn Research Center Cleveland, OH, United States)
Trunek, Andrew J.
(Ohio Aerospace Inst. Cleveland, OH, United States)
Powell, J. Anthony
(Sest, Inc. Cleveland, OH, United States)
Date Acquired
August 26, 2013
Publication Date
September 11, 2011
Publication Information
Publication: Materials Science Forum
Volume: 717-720
Subject Category
Solid-State Physics
Report/Patent Number
E-18272
Meeting Information
Meeting: 2011 International Conference on Silicon Carbide and Related Materials (ICSCRM2011)
Location: Cleveland, OH
Country: United States
Start Date: September 11, 2011
End Date: September 16, 2011
Funding Number(s)
CONTRACT_GRANT: SAA3-1048
CONTRACT_GRANT: DE-EE0001093/001
WBS: WBS 031102.02.03.0781.11
Distribution Limits
Public
Copyright
Other

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