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The Effects of Thermal Cycling on Gallium Nitride and Silicon Carbide Semiconductor Devices for Aerospace UseElectronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These Include radiation, extreme temperatures, thermal cycling, to name a few. Preliminary data obtained on new Gallium Nitride and Silicon Carbide power devices under exposure to radiation followed by long term thermal cycling are presented. This work was done in collaboration with GSFC and JPL in support of the NASA Electronic Parts and Packaging (NEPP) Program
Document ID
20120012937
Document Type
Presentation
Authors
Patterson, Richard L. (NASA Glenn Research Center Cleveland, OH, United States)
Hammoud, Ahmad (NASA Glenn Research Center Cleveland, OH, United States)
Date Acquired
August 26, 2013
Publication Date
June 11, 2012
Subject Category
Electronics and Electrical Engineering
Report/Patent Number
E-18315
Meeting Information
NEPP Third Electronics Technology Workshop(Greenbelt, MD)
Distribution Limits
Public
Copyright
Public Use Permitted.

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