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GaN-Based High Temperature and Radiation-Hard Electronics for Harsh EnvironmentsWe develop novel GaN-based high temperature and radiation-hard electronics to realize data acquisition electronics and transmitters suitable for operations in harsh planetary environments. In this paper, we discuss our research on metal-oxide-semiconductor (MOS) transistors that are targeted for 500 (sup o)C operation and >2 Mrad radiation hardness. For the target device performance, we develop Schottky-free AlGaN/GaN MOS transistors, where a gate electrode is processed in a MOS layout using an Al2O3 gate dielectric layer....
Document ID
20120013528
Document Type
Conference Paper
External Source(s)
Authors
Son, Kyung-ah (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Liao, Anna (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lung, Gerald (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Gallegos, Manuel (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Hatakeh, Toshiro (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Harris, Richard D. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Scheick, Leif Z. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Smythe, William D. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
August 26, 2013
Publication Date
April 7, 2010
Subject Category
Electronics and Electrical Engineering
Meeting Information
SPIE Defense Security and Sensing 2010.(Orlando, FL)
Distribution Limits
Public
Copyright
Other
Keywords
AlGaN/GaN
MOS transistor
high temperature
radiation-hard
Schottky-free