Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
Authors
Son, Kyung-ah (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States) Liao, Anna (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States) Lung, Gerald (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States) Gallegos, Manuel (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States) Hatakeh, Toshiro (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States) Harris, Richard D. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States) Scheick, Leif Z. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States) Smythe, William D. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States) Date Acquired
August 26, 2013
Publication Date
April 7, 2010
Subject Category
Electronics And Electrical Engineering Meeting Information
Meeting: SPIE Defense Security and Sensing 2010.
Location: Orlando, FL
Country: United States
Start Date: April 7, 2010
Distribution Limits
Public
Keywords
AlGaN/GaNMOS transistorhigh temperatureradiation-hardSchottky-free