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Compact Submillimeter-Wave Receivers Made with Semiconductor Nano-Fabrication TechnologiesAdvanced semiconductor nanofabrication techniques are utilized to design, fabricate and demonstrate a super-compact, low-mass (<10 grams) submillimeter-wave heterodyne front-end. RF elements such as waveguides and channels are fabricated in a silicon wafer substrate using deep-reactive ion etching (DRIE). Etched patterns with sidewalls angles controlled with 1 deg precision are reported, while maintaining a surface roughness of better than 20 nm rms for the etched structures. This approach is being developed to build compact 2-D imaging arrays in the THz frequency range.
Document ID
20120015249
Document Type
Conference Paper
External Source(s)
Authors
Jung, C. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Thomas, B. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lee, C. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Peralta, A. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Chattopadhyay, G. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Gill, J. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Cooper, K. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Mehdi, I. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
August 26, 2013
Publication Date
April 25, 2011
Subject Category
Electronics and Electrical Engineering
Meeting Information
IEEE International Microwave Symposium(Baltimore, MD)
Distribution Limits
Public
Copyright
Other
Keywords
Silicon micromachining
deep-reactive ion etching
nanotechnologies
super-compact
receiver front-ends
surface roughness