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Effects of Radiation and Long-Term Thermal Cycling on EPC 1001 Gallium Nitride TransistorsElectronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These include radiation, extreme temperatures, and thermal cycling, to name a few. Data obtained on long-term thermal cycling of new un-irradiated and irradiated samples of EPC1001 gallium nitride enhancement-mode transistors are presented. This work was done by a collaborative effort including GRC, GSFC, and support the NASA www.nasa.gov 1 JPL in of Electronic Parts and Packaging (NEPP) Program
Document ID
20120016796
Document Type
Presentation
Authors
Patterson, Richard L. (NASA Glenn Research Center Cleveland, OH, United States)
Scheick, Leif (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lauenstein, Jean-Marie (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Casey, Megan (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Hammoud, Ahmad (Vantage Partners, LLC Brook Park, OH, United States)
Date Acquired
August 26, 2013
Publication Date
September 1, 2012
Subject Category
Space Radiation
Report/Patent Number
E-18530
GRC-E-DAA-TN6084
Funding Number(s)
CONTRACT_GRANT: NNC12BA01B
WBS: WBS 724297.40.49.03.01
Distribution Limits
Public
Copyright
Public Use Permitted.

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